Intel and Micron have announced a new technology for the production of 3D NAND flash memory. With its 32 layers of flash cells, it will allow to get a storage capacity three times higher than competitor NAND technologies in a “die”, a block of semiconductor material on which electronic circuits were created, of standard size. The result are 256 GB dies in the MLC (Multi Level Cell) type and 384 GB in the (Triple Level Cell) type.